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对纳米晶器件,尤其是MOS电容进行了横截面TEM分析和不同条件下的电学特性(C-V特性)测量,包括+/ -BT分析.揭示了系统的纳米晶存储物理机制,例如电荷俘获、界面态填充和温度特性.研究结果表明,高温、大电压摆幅和偏置情况下,器件编程窗口的恶化和阈值电压的漂移与多数载流子的种类有关.
Cross-sectional TEM analysis of nanocrystalline devices, especially MOS capacitors, and measurement of electrical characteristics (CV characteristics) under different conditions, including + / -BT analysis revealed the systematic nanocrystalline memory physical mechanisms such as charge trapping, interface State filling and temperature characteristics.The results show that the deterioration of programming window and the shift of threshold voltage are related to the types of majority carriers under high temperature and high voltage swing and bias conditions.