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为了在广泛范围内给红外系统提供高性能探测器,研究了蹄镉汞材料和光电二极管制造工艺。首先强调的是安排10.6微米激光的探测器,即使设计和制造的探测器复盖1.5~14微米的红外波谱。因为光通讯所考虑的主要激光光源是10.6微米的CO_2激光,所以本文的主题是考虑在该波长上影响探测器性能的因素。本文对影响光电二极管性能的基本材料、掺杂浓度和载流子的传输进行了讨论。此外,介绍了特殊应用的光电二极管设计中的折衷考虑,同时介绍了在材料和制造工艺改进后预计可以得到的性能。
In order to provide high performance detectors for infrared systems over a wide range of applications, the cadmium-mercury materials and photodiode fabrication processes have been studied. The first emphasis is placed on the 10.6 micron laser detector, even though the detector designed and manufactured covers an infrared spectrum of 1.5-14 microns. Since the primary laser source considered by optical communications is a 10.6 micron CO 2 laser, the subject of this article is to consider the factors that affect detector performance at this wavelength. In this paper, the basic materials that affect the performance of photodiodes, the doping concentration and carrier transport are discussed. In addition, the trade-offs in the design of photodiodes for specific applications are introduced, along with the expected performance gains after improvements in materials and manufacturing processes.