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基于沟道调制效应、串联电阻效应的考虑 ,首先建立了一个和实验室符合很好的 6H-Si C JFET的模型 ,在该模型中采用了两级电离杂质模型和 Caughey-Thomas方程 ,接着在分析中子辐照对 Si C JFET电参数如电子浓度、迁移率、电阻率和空间电荷区密度影响的基础上 ,对 Si C JFET在室温和 30 0℃时的辐照响应进行了模拟。模拟结果和实验相符
Based on the channel modulation effect and the series resistance effect, a model of well-matched 6H-Si C JFET was established. In this model, a two-stage ionized impurity model and Caughey-Thomas equation were used, The effects of neutron irradiation on the electrical parameters of Si C JFET, such as electron concentration, mobility, resistivity and space charge density, were analyzed. The radiation response of Si C JFET at room temperature and 300 ℃ was simulated. Simulation results and experiments