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GaAs(110)衬底上生长GaAs外延层时,不同生长条件下存在单层和双层两种生长模式,对应反射高能电子衍射(RHEED)强度振荡呈现出单双周期的变化。通过透射电子显微镜(TEM)、室温和低温光荧光谱(PL谱)对两种生长模式下的样品进行了测量。结果表明,量子阱样品在双层生长模式下光学性能较差,单层生长模式下光学性能比较好,但是量子阱界面会变得粗糙。利用这一特点,采用RHEED强度振荡技术,能够实现在GaAs(110)衬底上生长高质量量子阱。
GaAs (110) substrate growth of GaAs epitaxial layer, there are two growth modes under different growth conditions, the corresponding reflected high energy electron diffraction (RHEED) intensity oscillation showed a single / double cycle changes. Samples from both growth modes were measured by transmission electron microscopy (TEM), room temperature, and low temperature fluorescence spectroscopy (PL spectroscopy). The results show that the quantum well has poor optical performance under the bilayer growth mode and better optical performance under the single-layer growth mode, but the quantum well interface becomes rough. Taking advantage of this feature, RHEED intensity oscillation technology enables the growth of high quality quantum wells on GaAs (110) substrates.