Strain drived band aligment transition of the ferromagnetic VS2/C3N van der Waals heterostructure

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Exploring two-dimensional (2D) magnetic heterostructures is essential for future spintronic and optoelectronic de-vices.Herein,using first-principle calculations,stable ferromagnetic ordering and colorful electronic properties are es-tablished by constructing the VS2/C3N van der Waals (vdW) heterostructure.Unlike the semiconductive properties with indirect band gaps in both the VS2 and C3N monolayers,our results indicate that a direct band gap with type-Ⅱ band align-ment and p-doping characters are realized in the spin-up channel of the VS2/C3N heterostructure,and a typical type-Ⅲband alignment with a broken-gap in the spin-down channel.Furthermore,the band alignments in the two spin channels can be effectively tuned by applying tensile strain.An interchangement between the type-Ⅱ and type-Ⅲ band alignments occurs in the two spin channels,as the tensile strain increases to 4%.The attractive magnetic properties and the unique band alignments could be useful for prospective applications in the next-generation tunneling devices and spintronic devices.
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