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本文讨论了准确模拟亚微米MOSFET碰撞电离所用的模型和算法。碰撞电离项被自洽地加到器件模拟程序PISCES中,用这个程序,我们计算了PN结击穿电压和0.75μm MOS-FET不同偏压下的衬底电流,结果和实验符合。
This article discusses the models and algorithms used to accurately simulate the impact ionization of submicron MOSFETs. Collision ionization terms were self-consistently added to the device simulation program PISCES. Using this procedure, we calculated the substrate junction current at PN junction breakdown voltage and 0.75 m MOS-FET bias voltage. The results are in agreement with the experiment.