为改善MOS电路因栅氧化物N_a~+沾污引起阈值电压漂移造成的不稳定,对栅氧化物进行高温磷处理,以形成磷硅玻璃膜来俘获栅氧化物中的可动N_a~+,文中探讨了能有效俘获N_a~+的最佳磷处理条件。另外,为消除电路管芯栅结构潜存结构缺陷造成的失效,对初测前的电路管芯大圆片施加长时间的热应力老化,实验结果表明,这种大圆片热老化有助于提高产品的后道合格率。 In order to improve the MOS circuit due to gate oxide N_a ~ + contamination caused by threshold voltage drift instability, the gate oxide high temperature phosphorus treatment to form a phosphosilicate glass film to capture the gate oxide in the movable N_a ~ +, In this paper, the optimal phosphorus treatment conditions for efficiently capturing N_a ~ + were discussed. In addition, in order to eliminate the failure caused by the latent structure defects of the circuit die gate structure, a long time thermal stress aging is applied to the circuit die wafer before the preliminary test. The experimental results show that the thermal aging of the large wafer helps to improve the product After the pass rate.