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报道了波长为1015 nm的大功率单频半导体光放大器的设计与研制,实验研究了不同注入光功率和不同温度下,放大器输出光功率与注入电流的依赖关系。结果表明:当波长为1015 nm、功率约为30 m W的种子光注入到半导体激光放大系统中,并把该放大器的注入电流增加到5 A时,其输出的激光功率高达1600 m W,相应的放大倍数可达17.3 d B,且放大器输出功率随温度的降低而增大。此外,还观测了半导体光放大器输出功率的稳定性,发现该放大器可长时间保持稳定工作。因此,该1015 nm激光放大系统可用于掺杂稀土离子晶体的激光冷却,四倍频后还可用于汞原子光钟的实验研究。
The design and development of a high power single frequency semiconductor optical amplifier with a wavelength of 1015 nm are reported. The dependence of the output optical power and the injection current on the output power of an optical amplifier and the temperature at different temperatures is experimentally studied. The results show that when the wavelength of 1015 nm and the power of about 30 m W are injected into the semiconductor laser amplification system and the injection current of the amplifier is increased to 5 A, the output laser power reaches as high as 1600 mW, corresponding to Magnification of up to 17.3 d B, and the amplifier output power increases with decreasing temperature. In addition, the stability of the output power of the semiconductor optical amplifier was observed, and the amplifier was found stable for a long time. Therefore, the 1015 nm laser amplification system can be used for laser cooling of doped rare earth ion crystals, and can also be used for the experimental study of mercury atomic optical clock after the fourth harmonic frequency.