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利用低压金属有机源气相沉积 (L P- MOCVD)技术 ,在 (0 0 0 1 )蓝宝石衬底上生长 Zn O纳米岛 ,发现在适当的生长条件下 ,可以生长出规则排列的纳米岛 .实验发现随着生长时间的增加 ,在蓝宝石衬底上沉积的 Zn O晶体颗粒无论是密度还是体积都在增加 ,并出现颗粒之间的交叠现象 .与厚膜材料相比 ,相应的室温 PL 谱上显示出带边蓝移现象 ,随着生长温度的提高将大大增加 Zn O在蓝宝石衬底上成核的困难 .另外 ,所有样品的室温 PL 谱在带边附近均存在一个展宽峰 ,这可能是由表面态或晶体缺陷造成的 .研究表明选择合适的生长时间与生长温度是利用MOCVD生长高质量 Zn O纳米岛的关键因素之一
The growth of Zn O nano-islands on a (0 0 0 1) sapphire substrate by low-pressure metal-organic source vapor deposition (L-MOCVD) shows that under proper growth conditions, regularly arranged nano islands can be grown. It was found that with the increase of the growth time, the Zn O crystal particles deposited on the sapphire substrate increased in both density and volume, and the overlap between the particles appeared.Compared with the thick film material, the corresponding room temperature PL spectrum On the sapphire substrate, the band-edge blue shift appears to increase greatly with the increase of the growth temperature.The nucleation of Zn O on the sapphire substrate can be greatly enhanced.In addition, the room temperature PL spectrum of all the samples has a broadening peak near the band edge, Is caused by the surface state or crystal defects.The research shows that choosing suitable growth time and growth temperature are one of the key factors to grow high quality Zn O nano-islands by MOCVD