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一、引言 半导体工艺中必然要使用各种气体作为保护气体或者作为反应气体。例如,制备硅、锗时用氢气作四氯化硅、四氯化锗、二氧化锗等的还原气体。硅器件扩散时用氮气作杂质源的运载及保护气体。而合金法形成PN结时用氮气作保护气体。反应溅射时用氮气、氧气、氮气加氧气或氩气加氧气作反应溅射的反应气体,低温气相钝化时氮气或氧气作运载气体等等。管芯成型后还要在一定保护气氛(如氮气或干燥空气)中封入管壳内。
First, the introduction of semiconductor technology is bound to use a variety of gases as a protective gas or as a reaction gas. For example, when silicon and germanium are used, hydrogen is used as a reducing gas for silicon tetrachloride, germanium tetrachloride, germanium dioxide and the like. Silicon device diffusion with nitrogen as an impurity source of the carrier and shielding gas. The alloy method to form a PN junction with nitrogen as a protective gas. During reactive sputtering, nitrogen, oxygen, nitrogen plus oxygen or argon plus oxygen is used as reactive gas for reactive sputtering, nitrogen or oxygen as carrier gas for low-temperature gas phase passivation, and the like. After the formation of the die but also in a protective atmosphere (such as nitrogen or dry air) sealed tube shell.