【摘 要】
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Indium phosphide (InP) quantum dots (QDs) have shown great potential to replace the widely applied toxic cadmiumcontaining and lead perovskite QDs due to their
【机 构】
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School of Material Science and Engineering, Shanghai University, Shanghai 200072, China“,”Key Labora
论文部分内容阅读
Indium phosphide (InP) quantum dots (QDs) have shown great potential to replace the widely applied toxic cadmiumcontaining and lead perovskite QDs due to their similar emission wavelength range and emission peak width but without intrinsic toxicity.Recently,electrically driven red and green InP-based quantum-dot light-emitting diodes (QLEDs) have achieved great progress in exteal quantum efficiency (EQE),reaching up to 12.2％ and 6.3％,respectively.Despite the relatively poor device performance comparing with cadmium selenide (CdSe)-and perovskite-based QLEDs,these encouraging facts with unique environmental friendliness and solution-processability foreshadow the enormous potential of InP-based QLEDs for energy-efficient,high-color-quality thin-film display and solid-state lighting applications.In this article,recent advances in the research of the InP-based QLEDs have been discussed,with the main focus on device structure selection and interface research,as well as our outlook for on-going strategies of high-efficiency InP-based QLEDs.
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