Titanium nitride(TiN) as a refractory plasmonic material is proposed to be used as an angle-insensitive integrated broadband solar absorber and narrowband near-infrared(NIR) emitter for solar thermo-photovoltaic(STPV) application. By constructing TiN-nanopatterns/dielectric/TiN stack metamaterial, approximately 93% light absorption in a wavelength range of 0.3–0.9 μm and near unit narrowband(Δλ∕λ～0.3) emission in NIR(～2 μm) were demonstrated by numerical simulation. Keeping the excellent light absorption in the visible band, the emission wavelength can be easily tuned by patterning the top TiN layer into various subwavelength structures. This dual function attributes to the intrinsic absorption and plasmonic property of TiN. In such an integrated structure,broadband absorption and narrowband emission need to be balanced for an optimized power efficiency conversion. Detailed analysis has demonstrated that the STPV system based on this integrated absorber/emitter canexceed the Shockley–Queisser limit at 1000 K. Titanium nitride (TiN) as a refractory plasmonic material is proposed to be used as an angle-insensitive integrated broadband solar absorber and narrowband near-infrared (NIR) emitter for solar thermo-photovoltaic (STPV) application. By constructing TiN-nanopatterns / dielectric Approximately 93% light absorption in a wavelength range of 0.3-0.9 μm and near unit narrowband (Δλ / λ ~ 0.3) emission in NIR (~ 2 μm) were demonstrated by numerical simulation. Keeping the excellent light absorption in The visible band, the emission wavelength can be easily tuned by patterning the top TiN layer into various subwavelength structures. This dual function attributes to the intrinsic absorption and plasmonic property of TiN. balanced for an optimized power efficiency conversion. Detailed analysis has demonstrated the the STPV system based on this integrated absorber / emitter canexceed t he Shockley-Queisser limit at 1000 K.