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使用超声分散CVD法合成的商用单壁碳纳米管(SWCNT),利用匀胶机把分散获得的、含有SWCNT的悬浮液均匀旋涂于SiO2/Si基上,利用萌罩式电子束蒸发技术在碳纳米管随机网络薄膜表面制备漏源Au电极。该制备技术避免了碳纳米管器件更多的化学接触,有效确保碳纳米管的纯度。该碳纳米管场效应晶体管器件采用重掺杂Si作为背栅、SWCNT随机网络薄膜为导电沟道。在室温环境下利用Keithley-4200对器件性能进行了测试分析,器件开启电流约为1μA,峰值跨导为326nS。该方法制备的SWCNT随机网络场效应晶体管,具有工艺实现简单、器件性能稳定、重复性和一致性好等特点,并可以用于构建CNT逻辑电路。该技术对于研究低成本、大规模基于CNT的集成电路来说,具有较高的借鉴价值。
Commercially available single-walled carbon nanotubes (SWCNTs) synthesized by ultrasonic dispersion CVD were uniformly spin-coated on a SiO2 / Si substrate using a spin coater to obtain a dispersion containing SWCNTs. The spin-on electron beam evaporation Preparation of drain - sourced Au electrode on the surface of carbon nanotube film. The preparation technique avoids more chemical contact of the carbon nanotube device and effectively ensures the purity of the carbon nanotube. The carbon nanotube field effect transistor device uses heavily doped Si as the back gate, and the SWCNT random network film is a conductive channel. The Keithley-4200 was used to test the performance of the device at room temperature. The device has a turn-on current of about 1μA and a peak transconductance of 326nS. The SWCNT random network field effect transistor prepared by the method has the characteristics of simple process realization, stable device performance, good repeatability and consistency, and can be used for constructing a CNT logic circuit. This technique has high reference value for studying low-cost, large-scale CNT-based integrated circuits.