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通过数值模拟和实验手段相结合的方法,优化了980 nm单模半导体激光器结构。给出了一种通过计算脊波导单模激光器的光场和电流场的匹配关系来预测芯片阈值电流变化规律的方法。采用金属有机物化学气相淀积方法生长了带有腐蚀停止层的Al Ga As/In Ga As量子阱结构激光二极管外延片,通过腐蚀停止层实现了对芯片脊波导深度的精确控制,芯片的一致性显著提高。980 nm单模半导体激光器芯片的阈值电流为11 m A,在注入电流为100 m A条件下,其光功率为93 m W,快慢轴方向远场发散角分别为40°和8°。
Through the combination of numerical simulation and experimental methods, the structure of 980 nm single mode semiconductor laser is optimized. A method for predicting the variation of chip threshold current by calculating the matching relationship between the optical field and the current field in a ridge waveguide single-mode laser is given. AlGaAs / In GaAs quantum well structure laser diode epitaxial wafer with an etch stop layer is grown by a metal-organic chemical vapor deposition method. Precise control of chip ridge waveguide depth by etching stop layer and chip consistency Significantly increased. The threshold current of the 980 nm single-mode semiconductor laser chip is 11 m A and its optical power is 93 mW at an injection current of 100 mA. The far-field divergence angles in the fast and slow axes are 40 ° and 8 °, respectively.