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报道了具有良好直流特性的晶格匹配 InP基 HEMT,器件的跨导为 600mS/mm,阈值电压为-1 2V,最大电流密度为500mA/mm,截止频率为120GHz.
The lattice matching InP based HEMT with good DC characteristics was reported. The device has a transconductance of 600mS / mm, a threshold voltage of -1 2V, a maximum current density of 500mA / mm and a cutoff frequency of 120GHz.