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Ga、In 掺杂比 B_2H_6掺杂的 a-Si∶H 具有较高的光电导率,而且直至 σ_D=10~(-3)(Ω·cm)~(-1)尚未出现猝灭现象。Ga、In 也使得 E_(?)以下1.2 eV 处缺陷态密度 N_s 增大。用不同掺杂剂制备 σ_D 相同的试样具有相同的 N_s,因此 N_s 的增大是由活性掺杂的结果,与掺杂剂无关。Ga、In 对吸收边的影响远小于 B_2H_6。这可能是由于它们电负性较小,原子较大,不如硼原子那样易构成桥式三中心键的缘故。
Ga and In doped a-Si: H doped with B_2H_6 has higher photoconductivity, and quenching phenomenon has not appeared until σ_D = 10 ~ (-3) (Ω · cm) -1. Ga and In also increase the defect density N_s at 1.2 eV below E_ (?). Preparation of different dopants σ_D same sample has the same N_s, so N_s increase is due to the activity of doping, regardless of the dopant. The influence of Ga and In on the absorption edge is much smaller than that of B_2H_6. This may be due to their smaller electronegativity and larger atomic number, which is not as easily bridged as the three-center bond as boron atoms do.