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基于直接等离子体注入(Direct Plasma Injection Scheme,DPIS)的方法,设计并建造了一台低能段离子加速装置;目前实验上利用该方法成功地加速了峰值流强为11.28 m A,能量为593 ke V/u的C6+脉冲束流。考虑到激光离子源产生的束流为脉冲束,且具有能散大,强度高等特点,给低能传输线(LEBT)的设计带来很大的困难,而DPIS方法则简单易行,可有效地提高注入效率;因此该装置将激光离子源与RFQ直接连接在一起,将离子源产生的等离子体直接注入到RFQ,并没有采用传统的LEBT。并采用IGUN程序对该注入方法进行了模拟,计算确定了离子源引出的强流脉冲束的参数以及注入效率,模拟的结果与实验的测量值一致。
Based on the method of direct plasma injection (DPIS), a low-energy ion accelerator was designed and constructed. At present, the experimental method successfully accelerates the peak current of 11.28 m A and the energy of 593 ke C6 + pulsed beam of V / u. Considering that the beam generated by the laser ion source is a pulsed beam, and has the advantages of energy dissipation and high intensity, it brings great difficulties to the design of the low energy transmission line (LEBT), while the DPIS method is simple and can effectively improve Injection efficiency; therefore, the device directly connects the laser ion source with the RFQ and injects the plasma generated by the ion source directly into the RFQ without the use of a conventional LEBT. The IGUN program was used to simulate the injection method. The parameters and the injection efficiency of the high-current pulsed beam derived from the ion source were determined. The simulation results are consistent with the experimental measurements.