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利用wx AMPS软件构建了高效Ga In P/Ga As/Ge太阳电池的中电池模型,并对电池抗辐照性能进行模拟研究。模拟发现,当辐照缺陷密度较小时,缺陷对中电池的电性能影响较小;当缺陷密度较大时,电性能的下降与电子注量值的对数成正比。计算电池的I-V和量子效率谱(QE曲线)可知,电池电性能的下降直接对应于量子效率的下降、饱和暗电流的增强以及并联电阻的衰降。模拟结果与试验结果的对比显示,在各子电池均匀损伤的假定下,1 Me V电子辐照的缺陷引入率约为0.81。
The battery model of Ga In P / Ga As / Ge solar cell with high efficiency was constructed by wx AMPS software, and the anti-radiation performance of the cell was simulated. The simulation shows that when the density of irradiation defect is small, the defect has little effect on the electrical performance of the battery. When the defect density is large, the decrease of electrical property is proportional to the logarithm of the electron fluence value. Calculating the cell’s I-V and quantum efficiency spectra (QE curves) shows that the decrease in battery electrical performance directly corresponds to a decrease in quantum efficiency, an increase in saturation dark current, and a decrease in shunt resistance. A comparison of the simulation results with the experimental results shows that the defect introduction rate of 1 Me V electron irradiation is about 0.81 under the assumption of uniform damage of each sub-cell.