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采用微机械电子系统(Micro Electro-Mechanical Systems,MEMS)和硅隔离(Silicon on Insulator,SOI)技术制作出了量程为25MPa的倒杯式耐高温压阻力敏芯片,敏感电阻条与硅基底之间采用二氧化硅隔离,解决了在大于120℃高温下力敏芯片工作稳定性和可靠性的难题。设计了齐平式机械封装结构,避免了管腔效应影响,提高了传感器的动态响应频率。对研制出的耐高温动态压力传感器进行了静态性能和动态性能的标定实验,静态实验温度为250℃,得到了传感器基本性能参数,分析了传感器的不确定度,得出该传感器的基本误差为±0.114%FS(Full Scale,全量程),不确定度为0.01794mV,计算得到了传感器的热零点漂移和热灵敏度漂移指标,由动态性能实验得到传感器的响应频率为555.6kHz,实验表明所研制的MEMS压力传感器在高温下具有良好的精度和固有频率。
An inverted cup-type high-temperature piezoresistive force-sensitive chip with a measuring range of 25 MPa was fabricated by using MEMS (Micro Electro-Mechanical Systems) and silicon on insulator (SOI) technology. The use of silicon dioxide isolation, solves the problem of working stability and reliability of the force-sensitive chip at a temperature greater than 120 ℃. The flush-mounted mechanical package structure is designed to avoid the influence of lumen effect and improve the dynamic response frequency of the sensor. The static pressure and dynamic performance of the developed high temperature dynamic pressure sensor were calibrated. The static experimental temperature was 250 ℃, and the basic performance parameters of the sensor were obtained. The uncertainty of the sensor was analyzed. The basic error of the sensor was obtained as ± 0.114% FS (Full Scale, full scale) and the uncertainty is 0.01794mV. The thermal zero shift and thermal sensitivity drift of the sensor were calculated. The response frequency of the sensor was 555.6kHz from the dynamic performance experiment. The MEMS pressure sensor has good accuracy and natural frequency at high temperature.