Gallium nitride (GaN) has received great attention because its outstanding properties are suitable for the development of novel microelectronic and optoelectronic devices. Ion beam implantation/engineering is an attractive method for device techniques such as selective-area doping or dry etching. The understanding of the damage production in GaN bombarded with energetic ions is fundamentally useful for the solution of such technical issues. Compared with low-energy ion irradiation, effects of swift heavy ions which induce intensive electronic excitation in GaN have been seldom investigated. Gallium nitride (GaN) has received great attention because its outstanding properties are suitable for the development of novel microelectronic and optoelectronic devices. Ion beam implantation / engineering is an attractive method for device techniques such as selective-area doping or dry etching. The understanding of the damage production in GaN bombarded with energetic ions is fundamentally useful for the solution of such technical issues. Compared with low-energy ion irradiation, effects of swift heavy ions which induce intensive electronic excitation in GaN have been seldom investigated.