随着亚毫米波或毫米波脉冲编码调制通信方式的发展,要求我们研制微波频带用的低噪声晶体管。现在的目的是以硅 npn 平面型晶体管为主,采用工作稳定的共发射极使用方法。对于微波晶体管的设计和制造技术,最近各公司都发表了有特色的方法,但是现在认为最有效的方法,基本上是由砷扩散的发射极,用硼热扩散或离子注入的基区以及以铂为主构成电极的方法。与此同时,还要使寄生电阻、寄生电容和电感都减小,并且还应考虑到和微波集成 With the development of submillimeter or millimeter wave pulse code modulation communication, we are required to develop a low noise transistor for microwave band. The purpose now is to silicon npn planar transistor based, using a stable working method of common emitter. Recently, various companies have published distinctive methods for the design and manufacture of microwave transistors. However, the most effective method is now considered to be basically an emitter diffused by arsenic, a base diffused by boron or an ion implantation base, Platinum consisting mainly of the electrode method. At the same time, but also to reduce the parasitic resistance, parasitic capacitance and inductance, and should also be considered and microwave integration