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采用表面光伏谱方法，测量了应变ＩｎＧａＡｓ／ＧａＡｓ单量子阱在不同温度下光伏效应．结合理论计算对样品表面光伏谱的谱峰进行了指认，分析了量子阱内子能级间的跃迁能量、强度及跃迁峰半宽随温度的变化关系
The photovoltaic effect of strained InGaAs / GaAs single quantum wells at different temperatures was measured by surface photovoltage spectroscopy. Theoretical calculations were performed to identify the peaks of the surface photovoltage spectra of the samples. The transition energies and intensities of the sub-energy levels in the quantum wells and the relationship between the FWHM and temperature were analyzed