2D perovskites for field-effect transistors

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Metal halide perovskites have gained a lot of attention in the field of solar cells and light-emitting diodes because of their excellent optoelectronic properties and simple scalable processability [1-3].The exceptional structural tunability enables perovskites to possess low-dimensional form at the atomic level, offering advantages such as suppressed ion migrations and improved stability [4].Solar cells with power conversion efficiency over 19% have already been reported using quasi-two-dimensional (quasi2D) Ruddlesden-Popper perovskites [5].Alternatively, 2D perovskites could be used in field-effect transistors (FETs), which require horizontal charge transport, therefore avoiding the limitations of weak vertical charge transport in 2D perovskites while still maintaining the advantages such as suppressed ion migration and high intrinsic carrier mobility [6-8].
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