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采用DC反应磁控溅射工艺在K424合金基底上制备了ZrO2薄膜,并对薄膜进行了不同温度的热处理,采用XRD、SEM和EDS等分析手段对薄膜的表面形貌、成分及晶体结构进行了表征,并研究了ZrO2薄膜对基底元素扩散的阻挡能力。结果表明,热处理后薄膜主要为单斜相ZrO2,含少量四方相。800℃以下热处理的薄膜致密平整,无裂纹出现,900℃热处理后基底元素Ti扩散至薄膜表面生成TiO2,导致ZrO2薄膜阻挡扩散作用失效。800℃以下热处理的ZrO2薄膜可以有效阻挡镍基合金元素的扩散。
The ZrO2 thin films were prepared on the substrate of K424 alloy by DC reactive magnetron sputtering. The films were heat treated at different temperatures. The surface morphology, composition and crystal structure of the thin films were investigated by XRD, SEM and EDS Characterization and ZrB2 thin film on the base element diffusion barrier. The results show that the films mainly consist of monoclinic ZrO2 with a small amount of tetragonal phase after heat treatment. The heat-treated films below 800 ℃ are dense and smooth without cracks, and Ti diffuses to the surface of the film after heat treatment at 900 ℃, resulting in failure of diffusion barrier of ZrO2 film. The ZrO2 film heat-treated at 800 ℃ can effectively block the diffusion of Ni-based alloying elements.