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本文运用晶界复合损失模型,分析计算了晶粒度和厚度对背面扬(Sn=0)和欧姆接触(Sn=∞)的MIS Schottky势垒多晶Si薄膜太阳电池光电流和短路电流的影响,并采用Green提出的少子隧道MIS二极管暗电流J_f公式,算出各种条件下的Voc和η。结果表明,用背面场代替欧姆接触能显著提高多晶Si太阳电池的Jsc、Voc和η,尤其在厚度较薄的条件下,这种提高更加显著,使得背面场MIS Schottky势垒多晶Si太阳电池在相当薄的厚度和不太大的晶粒度下,也能得到较高效率。这意味着在Schottky势垒多晶Si太阳电池中加背面场容易同时满足节省材料和工艺费用,以及获得较高效率等方面的综合要求,对降低太阳电池电功率成本有一定价值和意义。
In this paper, the effects of grain size and thickness on the photocurrent and short-circuit current of MIS Schottky barrier polycrystalline Si thin film solar cell with back side (Sn = 0) and ohmic contact (Sn = ∞) , And using Green’s proposed small sub-channel MIS diode dark current J_f formula to calculate the Voc and η under various conditions. The results show that the Jsc, Voc and η of polycrystalline Si solar cells can be significantly improved by using the backside field instead of the ohmic contact. This improvement is more significant especially in the case of thinner thickness, making the back field MIS Schottky barrier polycrystalline Si solar Batteries can also be more efficient at relatively thinner thicknesses and with less grain size. This means that adding Schottky barrier polycrystalline Si solar cells can easily meet the comprehensive requirements of saving material and processing cost and obtaining higher efficiency at the same time, which is of great value and significance for reducing the electric power cost of the solar cell.