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在以前发表的文章中,曾介绍了制作YZ-LiNbO_3-InSb层状结构的新技术,用这种技术制作的InSb薄膜的电物理特性如下:薄层电导率σd=(20-80)*10~(-6)欧~(-1)(σ为电导率,d为薄膜厚度);迁移率μ_d=(1000—1800)厘米~2/V_s;霍尔迁移率μ_H=(1500—2000)厘米~2/V_(so)以上述层状结构为基础的单片式声表面波(SAW)放大器在280兆赫的等幅波工作时净终端增益为15—30分贝。这种放大器的几何形状与科尔德伦的SAW等幅波放大器相似。显然,SAW振荡器和高频电振荡器都来源于具有相当反馈的放大器。 SAW放大器的性能与高频振荡器之间的
In a previously published article, a new technique for fabricating a layered structure of YZ-LiNbO_3-InSb was introduced. The electrical characteristics of the InSb thin film fabricated by this technique are as follows: sheet conductivity σd = (20-80) * 10 ~ (-6) Ω ~ (-1) (σ is the conductivity and d is the film thickness); Mobility μ_d = (1000-1800) cm ~ 2 / V_s; Hall mobility μ_H = (1500-2000) cm ~ 2 / V (so) The monolithic SAW amplifier based on the layered structure described above has a net terminal gain of 15-30 dB when operated at a constant amplitude of 280 MHz. The geometry of this amplifier is similar to that of a Corderron SAW equal amplitude amplifier. Obviously, both SAW oscillators and high frequency oscillators are derived from amplifiers with considerable feedback. SAW amplifier performance with high frequency oscillator