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利用射频磁控溅射技术通过Ti靶及TiO2靶在氩氧气氛中同时溅射制备TiO2薄膜,并对所得的样品进行不同温度的退火处理。采用X射线衍射、扫描电子显微镜、拉曼光谱和吸收谱研究了不同的靶材及退火温度对TiO2薄膜晶体结构、微观形貌及光学性质的影响。结果表明:由于靶材的不同,Ti靶溅射时氧分压较低,造成薄膜中存在大量的氧缺陷,晶相发育不完善,颗粒相比TiO2靶溅射时较小,从XRD和拉曼光谱来看,Ti靶溅射得到的TiO2薄膜更有利于金红石相的形成。薄膜的透过率随退火温度的升高而降低,TiO2靶材溅射的薄膜的光学带隙随温度升高而明显降低,而Ti靶得到的薄膜的光学带隙对退火温度的依赖关系不明显。
TiO2 thin film was prepared by RF magnetron sputtering technique with simultaneous sputtering of Ti target and TiO2 target in argon and oxygen atmosphere. The obtained samples were annealed at different temperatures. The effects of different targets and annealing temperature on the crystal structure, microstructure and optical properties of TiO2 thin films were investigated by X-ray diffraction, scanning electron microscopy, Raman spectroscopy and absorption spectra. The results show that due to the different target materials, the oxygen partial pressure during Ti sputtering is relatively low, resulting in a large number of oxygen defects in the film and imperfect crystal growth. The particle size is smaller when sputtered than the TiO2 target. In the man spectrum, the TiO2 film sputtered by Ti target is more conducive to the formation of rutile phase. The transmittance of the film decreases with the increase of the annealing temperature. The optical band gap of the film sputtered by the TiO2 target decreases with the increase of the temperature. However, the dependence of the optical band gap of the Ti target on the annealing temperature is not obvious.