本文比较了栅长为0.25μm,沟道长度(即源一漏间距)为2.1μm和0.5μm的GaAsMESFET的电性能。实验发现极短的沟道长度导致电子平均漂移速度、跨导和正向转换增益明显地增加。当0.25μm栅长器件的源-漏间距从2.1μm减小到0.5μm时,电子平均漂移速度和本征直流跨导都增加约70％。还指出了输出电导和极间电容增加的不利影响。 This article compares the electrical properties of GaAsMESFETs with gate lengths of 0.25 μm and channel lengths (ie, source-drain spacing) of 2.1 μm and 0.5 μm. Experiments have found that very short channel length leads to an average electron drift rate, transconductance and forward conversion gain is significantly increased. When the source-drain spacing of 0.25μm gate-length devices is reduced from 2.1μm to 0.5μm, the electron mean drift velocity and intrinsic DC cross-conduction both increase about 70%. The adverse effects of increased output conductance and interelectrode capacitance are also noted.