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CdS薄膜是一种n型半导体材料,用于CdTe多晶薄膜太阳电池的窗口层,其质量直接影响太阳电池的光电转换效率和寿命。用磁控溅射法制备了CdS薄膜,通过对薄膜进行X射线衍射(XRD)、扫描电子显微镜(SEM)、光致发光和紫外-可见光谱等测试,研究了CdS薄膜的制备工艺对薄膜结晶度、表面形貌和禁带宽度的影响关系。研究发现,随着CdS薄膜溅射功率的升高,薄膜的结晶度变好,晶粒增大,薄膜增厚,光致发光峰强度增加,禁带宽度减小;随着溅射气压减小,薄膜厚度增大,光致发光峰强度减小,禁带宽度减小。
CdS film is an n-type semiconductor material used in the window layer of CdTe polycrystalline thin film solar cells, the quality of which directly affects the solar cell photoelectric conversion efficiency and life expectancy. CdS films were prepared by magnetron sputtering. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence and ultraviolet-visible spectroscopy. Degree, surface morphology and the impact of gap width. The results show that with the increase of sputtering power of CdS film, the crystallinity of the film becomes better, the grain size increases, the thickness of the film increases, the intensity of the photoluminescence peak increases and the band gap decreases. As the sputtering pressure decreases , The film thickness increases, the photoluminescence peak intensity decreases, the forbidden band width decreases.