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在化学氧化得到的二氧化硅薄层覆盖的硅衬底上,室温淀积锗膜并进行后期退火处理.实验表明,不同于传统退火过程形成大岛,通过一定工艺的控制可以获得高密度(～1011cm-2)的均匀锗量子点.研究了后期退火温度对量子点的结构影响的局部反常规律并进行了原因分析.利用拉曼和荧光光谱研究了其应力和发光特性,发现在可见(500nm)和近红外(1350nm)的两个光致荧光峰出现.
The germanium film was deposited at room temperature and annealed later on the SiO2 substrate covered by chemical oxidation.The experimental results show that the large island ~ 1011cm-2) .Analysed the local anomalous regularity of post-annealing temperature on the structure of QDs and analyzed the causes of Raman and fluorescence.It was found that in the visible 500nm) and near-infrared (1350nm) two photoluminescence peaks appear.