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利用ITO(InSnO)靶和金属Zr靶,采用磁控溅射法在玻璃衬底上制备了ITO和ITZO(InSnZrO)薄膜。高价金属元素Zr的掺杂导致了薄膜向(400)晶面择优取向转变,促使ITO薄膜具有更好的晶化程度、较低的表面粗糙度和更好的光电性能。根据处于特定介质环境中ITO和ITZO薄膜的相对电阻变化(△R/R),ITZO薄膜显示了比ITO薄膜更好的化学和热稳定性。通过盐酸腐蚀前后的扫描电镜和X射线光电子能谱仪测试表明,Zr的加入提高了薄膜的稳定性,降低了氯离子穿透氧化层的能力,提高了氧化层的结构稳定性,大大降低了薄膜发生点蚀的概率。薄膜在0.1 mol/L盐酸中的极化曲线表明,ITZO薄膜发生了自钝化现象,显示了较好的耐腐蚀性能。除了晶体结构的影响之外,稳定性较好的氧化锆也提高了薄膜的化学稳定性和热稳定性。
ITO and ITZO (InSnZrO) thin films were prepared on glass substrates by magnetron sputtering using ITO (InSnO) and metal Zr targets. The doping of high-valent metal element Zr results in the preferred orientation of the (400) plane to the (400) plane, resulting in better crystallinity, lower surface roughness and better optoelectronic properties of the ITO thin film. The ITZO film shows better chemical and thermal stability than the ITO film, based on the relative resistance change (ΔR / R) of the ITO and ITZO films in a specific media environment. The results of scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (ESR) before and after hydrochloric acid etching show that the addition of Zr improves the stability of the film, reduces the ability of chloride ion to penetrate the oxide layer, improves the structural stability of the oxide layer and greatly reduces Pitting the probability of film. The polarization curve of the film in 0.1 mol / L hydrochloric acid shows that ITZO film self-passivated and showed good corrosion resistance. In addition to the influence of the crystal structure, the more stable zirconia improves the chemical and thermal stability of the film.