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MOS结构中光注入时外电路电流特性与绝缘膜中陷阱俘获截面密切相关.本文给出了外电路电流的时间衰减关系.借此,可以方便地测量陷阱的俘获截面.该方法可以应用于非硅衬底的金属-绝缘膜-金属(MIM)结构中.
The current characteristics of the external circuit during the light injection of MOS are closely related to the trap trapping cross section in the insulating film.This paper gives the relationship between the time attenuation of the external circuit current and the capture cross section of the trap.The method can be applied to non- Silicon substrate in a metal-insulator-metal (MIM) structure.