Fabrication of quantum-sized Cd S-coated Ti O2 nanotube array with efficient photoelectrochemical pe

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Quantum-sized Cd S-coated Ti O2 nanotube array(Q-Cd S-Ti O2NTA) was fabricated by the modified successive ionic layer absorption and reaction method.Scanning electron microscope and transmission electron microscope images showed the regular structure of Ti O2 NTA, where quantum-sized Cd S(diameter 10 nm)deposited on both the inside and outside of Ti O2 nanotube wall. Fabrication conditions including immersing cycles,calcination temperature and drying process were well optimized, and the Q-Cd S-Ti O2 NTA and its photoelectrochemical(PEC) properties were characterized by X-ray fluorescence spectrometer, UV–Vis diffuse reflectance spectra and photovoltage. Distinct increases in visible light absorption and photocurrent were observed as the immersing cycle was increased from 5 to 20 times. The additional drying process accelerated the Cd S crystal growth rate, and thus, the fabrication time could be shortened accordingly. Calcination temperature influenced the PEC property of Q-Cd S-Ti O2 NTA deeply, and the optimized calcination temperature was found as 500 °C. As the Q-Cd S-Ti O2 NTA was fabricated under such condition, thevisible photocurrent density increased to 2.8 m A/cm and the photovoltage between 350 and 480 nm was enhanced by 2.33 times than that without calcination. This study is expected to optimize Q-Cd S-Ti O2 NTA fabrication conditions for the purpose of improving its PEC performance. Quantum-sized Cd S-coated Ti02 nanotube array (Q-CdS-Ti02NTA) was fabricated by the modified successive ionic layer absorption and reaction method. Scanning electron microscope and transmission electron microscope images showed the regular structure of Ti02NTA, where quantum-sized Cd S (diameter 10 nm) deposited on both inside and outside of Ti O2 nanotube wall. Fabrication conditions including immersing cycles, calcination temperature and drying process were well optimized, and the Q-Cd S-Ti O2 NTA and its photoelectrochemical (PEC) properties were characterized by X-ray fluorescence spectrometer, UV-Vis diffuse reflectance spectra and photovoltage. Distinct increases in visible light absorption and photocurrent were observed as the immersing cycle was increased from 5 to 20 times. The additional drying process accelerated the Cd S crystal growth rate, and thus, the fabrication time could be shortened accordingly. Calcination temperature influenced the PEC property of Q-Cd S-Ti O2 NTA deeply, and the optimized calcination temperature was found at 500 ° C. As the Q-Cd S-Ti O2 NTA was fabricated under such conditions, the visible photocurrent density increased to 2.8 m A / cm and the photovoltage between 350 and 480 nm was enhanced by 2.33 times than that without calcination. This study is expected to optimize Q-Cd S-Ti O2 NTA fabrication conditions for the purpose of improving its PEC performance.
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