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以Na2CO3为电荷补偿剂,采用凝胶-燃烧法合成新型红色硅酸盐发光材料SrMgSi2O6:Eu3+。用X射线粉末衍射仪、荧光分光光度计等对合成产物进行分析和表征。结果表明:SrMgSi2O6:Eu3+的晶体结构与Sr2MgSi2O7相同,同属四方晶系。样品SrMgSi2O6:Eu3+的激发光谱在220～300nm出现一宽带吸收,归属于O2--Eu3+之间的电荷迁移,300nm以后出现的锐线峰为Eu3+的f-f跃迁吸收峰,其最强锐线峰位于400nm,因而,可以被InGaN管芯产生的紫外辐射有效激发。发射光谱由两个强发射峰组成,位于592和618nm处,分别属于典型的Eu3+的5D0→7F1和5D0→7F2跃迁。此外,研究发现:共掺Gd3+或Ti4+均能敏化Eu3+的发光,可有效提高样品的红光发射。因此,SrMgSi2O6:Eu3+,M(M=Gd3+,Ti4+)有望成为一种与InGaN管芯匹配的白光LED用红色荧光粉。
A novel red silicate luminescent material SrMgSi2O6: Eu3 + was synthesized by gel - combustion method using Na2CO3 as charge compensation agent. The synthesized product was analyzed and characterized by X-ray powder diffractometry, fluorescence spectrophotometer and the like. The results show that the crystal structure of SrMgSi2O6: Eu3 + is the same as that of Sr2MgSi2O7 and belongs to the tetragonal system. The excitation spectrum of sample SrMgSi2O6: Eu3 + appears a broadband absorption at 220-300 nm and belongs to the charge transfer between O2 - Eu3 +. The sharp peak appearing after 300 nm is the ff transition absorption peak of Eu3 + 400nm, thus, it can be effectively excited by the UV radiation generated by the InGaN die. The emission spectrum consists of two strong emission peaks located at 592 and 618 nm, belonging to the typical 5D0 → 7F1 and 5D0 → 7F2 transitions of Eu3 +. In addition, the study found that: co-doped Gd3 + or Ti4 + can sensitize Eu3 + luminescence can effectively improve the sample’s red emission. Therefore, SrMgSi2O6: Eu3 +, M (M = Gd3 +, Ti4 +) is expected to become a kind of red phosphor for white LED matched with InGaN die.