一、概述半导体中深中心对器件的影响越来越为人们所重视。深中心的存在不仅直接影响器件的参数,如噪声、发光效率等,而且对器件的稳定性、可靠性也有明显的影响。对于化合物半导体,情况尤为严重。因为在化合物半导体中,化学配比的失配往往造成较多的点缺陷(如空位等),这些缺陷本身,以及它与杂质或其他缺陷结合形成各种深中心,如 GaAs 中的镓空位 V_(Ga)本身,或与其他杂质、缺陷形成的复合物就能形成价带上 First, an overview of the semiconductor in the center of the device more and more attention. The existence of a deep center not only directly affects the parameters of the device, such as noise, luminous efficiency, but also has a significant impact on the stability and reliability of the device. In compound semiconductors, the situation is especially serious. Because in compound semiconductors, stoichiometric mismatches tend to cause more point defects (such as vacancies), these defects themselves, and their combination with impurities or other defects to form various deep centers such as Ga vacancies in GaAs V_ (Ga) itself, or with other impurities, defects formed complex can form a valence band