报道了在 Ｓｉ Ｏ２ 和 Ｓｉ３ Ｎ４ 膜上用 Ｒ Ｔ Ｃ Ｖ Ｄ 法直接沉积多晶硅薄膜的实验结果，在这两种薄膜上制备出了具有柱状晶粒的多晶硅薄膜，发现两者在薄膜的结构和结晶取向上有很大不同。用 Ｒ Ｔ Ｃ Ｖ Ｄ 法在 Ｓｉ Ｏ２ 膜上沉积的多晶硅膜，晶粒较大，晶粒间的空隙也较大，晶粒的择优取向为〈１１１〉；在 Ｓｉ３ Ｎ４ 膜上沉积的多晶硅薄膜，晶粒尺寸较小，晶粒致密，晶粒间基本无空隙，晶粒的择优取向为〈１００〉 The experimental results of direct deposition of polycrystalline silicon thin films on Si O2 and Si3 N4 films by RTVC method were reported. Polysilicon films with columnar grains were prepared on the two films. Crystallographic orientation is very different. The polycrystalline silicon film deposited on the Si O2 film by RTCVD method has larger grains and larger interspaces between the grains and the preferential orientation of the grains is <111>. The polycrystalline silicon film deposited on the Si3N4 film , The grain size is smaller, the grains are dense, the grains are almost no voids, the preferred orientation of the grains is <100>