研究了基于硅基集成光波导的马赫-曾德干涉仪(MZI)型化学传感芯片的设计、制备及相关敏感特性的模拟和分析。传感芯片采用硅基二氧化硅光波导材料,利用与传统互补型金属氧化物半导体(CMOS)兼容的工艺技术制作。通过波导的单模设计以及对MZI结构的优化,获得了有效折射率分辨率达到10-7量级的高灵敏度传感芯片。作为化学传感器,把MZI的其中一臂设计成传感臂,并进行适当的表面修饰,可制作出高灵敏度的干涉型光波导化学传感器。最后,对该传感器的折射率分辨率、敏感特性等进行了分析、模拟,同时,对面临的关键问题进行了分析和讨论。 The design and fabrication of MZI-based chemical sensing chip based on Si-based integrated optical waveguide and the simulation and analysis of its sensitive characteristics are studied. The sensor chip uses silicon-based silicon dioxide optical waveguide material and is fabricated using process technology compatible with conventional complementary metal oxide semiconductor (CMOS). Through the single-mode design of the waveguide and the optimization of the MZI structure, a highly sensitive sensor chip with an effective refractive index resolution of 10-7 was obtained. As a chemical sensor, one of the MZI is designed as a sensor arm, and the appropriate surface modification, can produce high sensitivity interference optical waveguide chemical sensor. Finally, the resolution and sensitivity of the sensor are analyzed and simulated. At the same time, the key problems are analyzed and discussed.