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采用电子束蒸发技术在TiO2缓冲层上沉积了ZnO薄膜,研究了不同的退火温度对薄膜晶化质量及发光性质的影响.利用X射线衍射仪和扫描探针显微镜分析了薄膜样品的结构性质,利用荧光光谱仪研究了薄膜样品的光致发光性质.分析结果表明,退火处理后的ZnO薄膜都沿c轴择优生长.在600℃下退火的样品具有最强的(002)衍射峰、最强的紫外发射和最弱的可见光发射,其晶粒大小均匀,紧密堆积.而对于在500和700℃下退火的样品,其可见光发射较强.这表明在600℃下退火的样品具有最好的晶化质量.
ZnO thin films were deposited on the TiO2 buffer layer by electron beam evaporation and the effects of different annealing temperature on the crystallization quality and the luminescence properties of the films were studied.The structure and properties of the thin films were analyzed by X-ray diffraction and scanning probe microscopy, The photoluminescence (PL) properties of the films were investigated by fluorescence spectroscopy. The results show that the annealed ZnO films are all preferentially grown along the c-axis. The samples annealed at 600 ℃ have the strongest (002) diffraction peak, the strongest UV emission and the weakest visible emission with uniform and close-packed grain size and stronger visible emission for samples annealed at 500 and 700 ° C. This shows that the sample annealed at 600 ° C. has the best crystal Quality.