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为了满足辐射探测器件的需要,将生长得到的Cd_(1-x)Zn_xTe晶体在In气氛下进行退火处理能有效提高晶体的电阻率等性能.退火处理过程的实质是一个扩散过程,因此研究扩散系数与Cd_(1-x)Zn_xTe晶体的性能特别是电阻率变化之间的关系具有重要的意义.建立了退火处理过程中Cd_(1-x)Zn_xTe晶体材料电阻率及导电类型变化与杂质的扩散系数之间关系的模型.结合实验数据,获得了1073,973和873K下In在Cd0·9Zn0·1Te晶体中的扩散系数并估算了其激活能.提出了一种确定浅施主杂质在半导体中的扩散系数的新方法.通过使用获得的扩散系数,模拟了1073,973和873K下及饱和In气氛下,退火时间对Cd0·9Zn0·1Te晶体电阻率及导电类型变化的影响,所得结果与实验相符.
In order to meet the needs of radiation detection devices, the growth of the Cd_ (1-x) Zn_xTe crystals annealed in an In atmosphere can effectively improve the crystal properties such as the resistivity of the annealing process is essentially a diffusion process, so the study of diffusion The relationship between the coefficients and the properties of Cd 1-x Zn x Te crystals, especially the change of resistivity, is of great significance.Established the change of resistivity and conductivity type and the impurity of Cd 1-x Zn x Te alloys during annealing The diffusion coefficient of In0.9Zn0.1Te crystal at 1073, 973 and 873K was obtained and the activation energy was estimated.A method for determining the shallow donor impurity in semiconductors The diffusion coefficient was used to simulate the effect of annealing time on the resistivity and conductivity of Cd0.9Zn0.1Te crystal at 1073, 973 and 873K and in a saturated In atmosphere. The results obtained are in agreement with the experimental results Match.