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本文主要叙述通过射频电场产生的辉光放电等离子体,在200～300℃的温度下淀积Si_3N_4膜.给出了实验条件、红外光谱仪分析膜组分的给果,简述了PECVDSi_3N_4膜在InSb红外CCD中的作用.
This paper mainly describes the glow discharge plasma generated by radio frequency electric field and the deposition of Si_3N_4 film at the temperature of 200 ~ 300 ℃. The experimental conditions are given, and the results of the analysis of the film components by infrared spectroscopy are briefly described. The PECVDSi_3N_4 film is described in InSb The role of infrared CCD.