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引言磷化镓是目前主要采用的绿色发光材料。国外对于汽相外延制取此材料作了不少努力,但目前效率最高的材料是由液相外延形成p-n生长结而制得的。我们为了获得优质的绿色发光材料,选取了液相外延;同时为了提高产量,在试用双池法之后也采用过一次外延加扩散的办法,还采用过薄熔料过补偿法。将这三种方法制得的p-n结材料制成的发光二极管进行比较时发现,双池法和过补偿法做的p-n生长结均可获得好的亮
Introduction Gallium phosphide is currently the main use of green light-emitting materials. Abroad for vapor phase epitaxy made this material has made a lot of efforts, but the most efficient material is formed by the liquid phase epitaxy p-n growth and obtained. In order to obtain high-quality green luminescent materials, we selected the liquid phase epitaxy. In the meantime, in order to increase the output, we also used the epitaxial diffusion method after the double-cell method. We also adopted the over-compensation method. Comparing the light-emitting diodes made of p-n junction materials made by the three methods, it was found that both the double-cell method and the p-n growth junction made by the over-compensation method are good