论文部分内容阅读
本文用四极质谱(QMS)、X射线光电子谱(XPS)、俄歇电子能谱(AES)等手段,对单一源热壁外延(HWB)ZnSe/GaAs 薄膜的生长机理作了一些研究.这些研究主要包括 ZnSe源的蒸发情况以及在不同衬底温度条件下,外延薄膜的化学配比状态.
In this paper, the growth mechanism of ZnSe / GaAs single-source hot-wall epitaxial (HWB) films has been studied by means of QMS, XPS, The research mainly includes the evaporation of ZnSe source and the stoichiometry of epitaxial thin films under different substrate temperature.