研究了掺磷对纳米硅薄膜微结构和电学特性的影响 .指出气相掺杂能使nc Si:H膜中磷原子浓度达到原子分数 5%的水平 ,掺杂效率可达 η≈ 1 .0 % .掺磷后能使薄膜暗电导率提高两个数量级 ,达到σ =1 0 -1～ 1 0 1S·cm-1,电导激活能ΔE =( 1～ 6)× 1 0 -2 eV水平 .掺磷能促使nc Si:H膜更加有序化且晶粒尺寸变小 ,这有利于使纳米硅薄膜往应用方向发展 The effect of phosphorus on the microstructure and electrical properties of nanocrystalline silicon thin films was investigated. It is pointed out that the gas phase doping can make the atomic concentration of phosphorus in nc Si: H film reach 5%, the doping efficiency can reach η≈1.0% After doping phosphorus, the dark conductivity of the film can be increased by two orders of magnitude, reaching σ = 100-1 ~ 110 S · cm-1, and the activation energy ΔE = (1-6) × 10-2 eV. Phosphorus can promote nc Si: H film more ordered and smaller grain size, which is conducive to the development of nano-silicon film to the application direction