We report the first implementation of transparent electrodes in bottom-gate graphene transistors used for photo detection.Compared to conventional nontransparent electrodes,the transparent electrodes allow photons to transmit through to the graphene beneath,providing an enlarged absorption area and thereby giving rise to an enhancement of photocurrent generation.The devices are fabricated with an asymmetric metallization scheme and the experimental results show that the maximum photocurrent density using the transparent electrodes (ITO and Pd/ITO) is over two times higher than that using the nontransparent electrodes (Ti and Pd),indicating a significant enhancement in the performance of graphene photo sensors.Graphene,a single-atomic-layer of carbon atoms with a zero-gap band structure has received great attention recently.[1-4] One promising application of graphene is in high-speed photodetection,owing to its high Fermi velocity (～1/300 of the speed of light),high electrical mobility (200000 cm2/Vs for both electrons and holes) and zero-gap induced wide absorption spectrum (in the visible-to-infrared range).[5,6]