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A low-noise amplifier(LNA)operated at 40 GHz is designed.An improved cascode configuration is proposed and the design of matching networks is presented.Short-circuited coplanar waveguides(CPWs)were used as inductors to achieve a high Q-factor.The circuit was fabricated in a 0.13-μm SiGe BiCMOS technology with a transistor transit frequency fT of 103GHz.The chip area is 0.21mm2.The LNA has one cascode stage with a-3dB bandwidth from 34 to 44GHz.At 40GHz,the measured gain is 8.6dB;the input return loss,S11,is-16.2dB;and the simulated noise figure is 5dB.The circuit draws a current of only 3mA from a 2.5V supply.
A low-noise amplifier (LNA) operated at 40 GHz is designed. An improved cascode configuration is proposed and the design of matching networks is presented. Short-circuited coplanar waveguides (CPWs) were used as inductors to achieve a high Q-factor. The circuit was fabricated in a 0.13-μm SiGe BiCMOS technology with a transistor transit frequency fT of 103GHz. The chip area is 0.21mm2. The LNA has one cascode stage with a-3dB bandwidth from 34 to 44GHz. At 40GHz, the measured gain is 8.6dB; the input return loss, S11, is-16.2dB; and the simulated noise figure is 5dB. The circuit draws a current of only 3mA from a 2.5V supply.