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研制了石英质射频激励等离子体活性氮源 ,将此氮源安装到国产 FW- 型分子束外延设备上 ,成功地生长了 p型 Zn Se:N优质单晶薄膜 .SIMS测量表明 ,薄膜中氮浓度高达～ 1.5× 10 2 0 cm- 3;PL 测量表明 ,氮在 Zn Se中形成了受主能级 ;C- V测量表明 ,净空穴浓度 [Na]- [Nd]≈ 5× 10 1 7cm- 3,达到了制备原理性蓝绿色激光二极管的要求 (～ 4.0× 10 1 7cm- 3) .C- V测量的结果同时得到远红外光谱法测量数据的佐证 .
A quartz radio frequency excited plasma active nitrogen source was developed, and the nitrogen source was mounted on a domestic FW-type molecular beam epitaxy apparatus to successfully grow a p-type Zn Se: N high quality single crystal thin film.SIMS measurement showed that nitrogen The concentration was as high as ~ 1.5 × 10 2 cm -3. PL measurements showed that nitrogen formed an acceptor level in Zn Se. C-V measurements showed that the net hole concentration [Na] - [Nd] ≈ 5 × 10 17 cm - 3, which meets the requirement for the preparation of a theoretical blue-green laser diode (~ 4.0 × 10 7 cm -3). The results of C-V measurements are corroborated by far-infrared spectroscopy measurements.