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The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.
The temperature dependence of carrier transport properties of AlxGa1-xN / InyGa1-yN / GaN and AlxGa1-xN / GaN heterostructures has been investigated. It is shown that the Hall mobility in Al0.25Ga0.75N / In0.03Ga0.97N / GaN heterostructures is higher than that in Al 0.25 Ga 0.75 N / GaN heterostructures at temperatures above 500 K, even the mobility in the current is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Al 0.25 Ga 0.75 /In0.03Ga0.97N/GaN heterostructures decreased slightly, while the electron sheet density in Al 0.25Ga 0.75N / GaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN / GaN heterointerface induced by the compressive strain in the InyGa1-yN channel, which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.