论文部分内容阅读
A 10-nm-thick molybdenum tri-oxide(MoO3) thin film was used as the interconnector layer in tandem organic lightemitting devices(OLEDs).The tandem OLEDs with two identical emissive units consisting of N,N-bis(naphthalen-1-yl)N,N-bis(phenyl)-benzidine(NPB) /tris(8-hydroxyquinoline) aluminum(Alq3) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices.At 20 mA/cm2,the current efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd/A,which is about twice that of the corresponding conventional single-unit device(1.8cd/A).The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200cd/m2.The experimental results demonstrated that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs.Such an interconnector layer can be easily fabricated by simple thermal evaporation,greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers.A possible explanation was proposed for the carrier generation of the MoO3 interconnector layer.
A 10-nm-thick molybdenum tri-oxide (MoO3) thin film was used as the interconnector layer in tandem organic lightemitting devices (OLEDs). The tandem OLEDs with two identical emissive units consisting of N, N-bis (N-bis (phenyl) -benzidine (NPB) / tris (8-hydroxyquinoline) aluminum (Alq3) had current efficiency-current density characteristics superior to the conventional single- efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd / A, which is about twice that of the corresponding conventional single-unit device (1.8 cd / A). tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200 cd / m2. The experimental results of that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs .Such an interconnector layer can be easily fabricated by simple thermal evaporation, changed simpl dev the devic e processing and fabrication processes required by previously reported interconnector layers. A likely explanation was proposed for the carrier generation of the MoO3 interconnector layer.