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NEC开发出了0.07μm线宽的CMOS大规模集成电路NEC开发成功了16GDRAM千兆位的动态存储器工艺需要0.07μm的线宽,NEC制成了在1.SV电压和低持续电流条件下延迟时间为16.7PS的超高速动态存储器。该成果是在去;年6月召开的VISI...
NEC has developed a CMOS large scale integrated circuit with a 0.07μm line width. NEC has successfully developed a 16GDRAM gigabit dynamic memory process with a 0.07μm line width, and NEC has made it at 1. The NEC has been able to achieve this goal. SV voltage and low sustained current conditions, the delay time of 16.7PS ultra-high-speed dynamic memory. The result is going; in June of the year VISI ...