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利用高温高压方法在2～5.0 GPa和900 K的合成条件下成功合成出系列立方相Sm填充型方钴矿化合物Sm_xCo_4Sb_12(x=0.2,0.6,0.8)体热电材料,并系统地研究了合成压力及不同的Sm填充分数对其室温下的电输运特性(电阻率、Seeddeck系数、功率因子)的影响.研究结果表明,Sm填充型方钴矿化合物Sm_xCo_4Sb_12为n型半导体.在不同压力下,随着Sm填充分数的增加,Seeddeck系数的绝对值和电阻率均呈现降低趋势.在2 GPa,900 K条件下合成的Sm_0.8Co_4Sb_12化合物功率因子达到最大值5.88μw/(cm·K2).
A series of Sm_xCo_4Sb_12 (x = 0.2,0.6,0.8) bulk thermoelectric materials with cubic cubic Sm-filled skutterudite compound were successfully synthesized by high temperature and high pressure under the synthetic conditions of 2 ~ 5.0 GPa and 900 K, and the synthesis pressure And the influence of different Sm filling fraction on the electrical transport properties (resistivity, Seeddeck coefficient, power factor) at room temperature.The results show that the Sm-filled cobalt compound Sm_xCo_4Sb_12 is n-type semiconductor.Under different pressures, With the increase of Sm filling fraction, the absolute value and the resistivity of Seeddeck coefficient both showed a decreasing trend.The maximum power factor of Sm 0.8 Co 4 Sb 12 compound synthesized at 2 GPa and 900 K reached 5.88μw / (cm · K 2).